INVENTO 10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

Price: ₹ 400.00 - ₹ 124.00
(as of Jan 27,2023 13:17:03 UTC – Details)

Collector to emitter breakdown voltage of 160V. DC collector current of 600mA
Collector to emitter saturation voltage of 200mV at 50mA collector current. DC current gain of 30 at Ic=50mA
Power dissipation of 625mW. Operating junction temperature range from -55°C to 150°C
Package Include: 10 x 2N5551

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