INVENTO 2Pcs IRF540N MOSFET Transistor, N Channel, 33 A, 100 V, 0.044 ohm, 10 V, 4 V


Price: ₹ 450.00 - ₹ 270.00
(as of Feb 01,2023 03:37:37 UTC – Details)



Package Include 2 x IRF540N The IRF540NP from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source voltage Vds is 100V; Gate to source voltage is 20V. On resistance Rds(on) of 44mohm at Vgs of 10V; Power dissipation Pd of 130W at 25°C. Continuous drain current Id of 33A at Vgs 10V and 25°C; Operating junction temperature range from -55°C to 175°C.

Is Discontinued By Manufacturer:No
Product Dimensions:1.5 x 1.5 x 0.5 cm; 20 Grams
Date First Available:7 January 2017
Manufacturer:INVENTO
ASIN:B07ZN2TRP7
Item model number:ISC 1753
Country of Origin:India
Manufacturer:INVENTO, No
Item Weight:20 g
Item Dimensions LxWxH:15 x 15 x 5 Millimeters
Generic Name:INVENTO 2Pcs IRF540N MOSFET Transistor, N Channel, 33 A, 100 V, 0.044 ohm, 10 V, 4 V

Drain to source voltage Vds is 100V; Gate to source voltage is ±20V.
On resistance Rds(on) of 44mohm at Vgs of 10V; Power dissipation Pd of 130W at 25°C.
Continuous drain current Id of 33A at Vgs 10V and 25°C; Operating junction temperature range from -55°C to 175°C.
Package Include 2 x IRF540N

Leave a Comment

Your email address will not be published. Required fields are marked *